IRFZ44ZSPBF – MOSFET N-Ch 55V 51A 0,0139R D2Pak

HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety of applications.