Power MOSFETISOPLUS247TM(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesSilicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolationLow drain to tab capacitance(
IXFR80N50P – MOSFET N-Ch 500V 45A 360W 0,072R TO247-Isoplus
20,70 €
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