IRLR3114ZPBF – MOSFET N-LogL, 40 V, 42 A, Rds(on) 0,0049 Ohm, TO-252AA

HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLogic LevelDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.