STB100N10F7 – MOSFET N-Ch 100V 80A 0,008R D2Pak

STripFET™ F7 Power MOSFETsFeaturesAmong the lowest RDS(on) on the marketExcellent FoM (figure of merit)Low Crss/Ciss ratio for EMI immunityHigh avalanche ruggednessApplicationsSwitching applicationsDescriptionThese N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.