IRFI640GPBF – MOSFET N-Kanal, 200 V, 9,8 A, Rds(on) 0,18 Ohm, TO-220-Fullpak

Power MOSFETFEATURES• Isolated Package• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)• Sink to Lead Creepage Distance = 4.8 mm• Dynamic dV/dt Rating• Low Thermal Resistance• Lead (Pb)-free Available