IRFB4332PBF – MOSFET N-Kanal, 250 V, 60 A, Rds(on) 0,033 Ohm, TO220AB

HEXFET® Power MOSFETFeatureAdvanced Process TechnologyKey Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsLow EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch ApplicationsLow QG for Fast ResponseHigh Repetitive Peak Current Capability for Reliable OperationShort Fall & Rise Times for Fast Switching175°C Operating Junction Temperature for Improved RuggednessRepetitive Avalanche Capability for Robustness and Reliability