Ergebnisse 9073 – 9120 von 11281 werden angezeigt
SGM810B-TXN3LG – MCU-Spannungsüberwachung – IC, 3,08 V, -40/+125°C, SOT-23
SGM811B-SXKA4G – MCU-Spannungsüberwachung – IC, 2,93 V, -40/+125°C, SOT-143
SGM811B-TXKA4G – MCU-Spannungsüberwachung – IC, 3,08 V, -40/+125°C, SOT-143
SGM8301YN5G/TR – 1-fach Rail-to-Rail-Verstärker 4,5-12 V, 57MHz, 115 V/us, SOT-23
SGM8302YS8G/TR – 2-fach Rail-to-Rail-Verstärker, 4,5 – 12 V, 57 MHz, 115 V/us, SO
SGM8521XS/TR – 1-fach Rail-to-Rail-OP, 2,1..5,5 V, 0,15 MHz, 0,05 V/us, SO-8
SGM8522XS/TR – 2-fach Rail-to-Rail-OP, 2,1..5,5 V, 0,15 MHz, 0,05 V/us, SO-8
SGM8524XS14/TR – 4-fach Rail-to-Rail-OP, 2,1..5,5 V, 0,15 MHz, 0,05 V/us, SO-14
SGM8551XS8G/TR – 1-fach Rail-to-Rail-OP, 2,5 – 5,5 V, 1,5 MHz, 0,9 V/us, SO-8
SGM8581XN5G/TR – 1-fach Rail-to-Rail-OP, 2,5 – 5,5 V, 1,5 MHz, 0,8 V/us, SOT-23-5
SGM8582XS8G/TR – 2-fach Rail-to-Rail-OP, 2,5 – 5,5 V, 1,5 MHz, 0,8 V/us, SO-8
SGM8584XS14G/TR – 4-fach Rail-to-Rail-OP, 2,5 – 5,5 V, 1,5 MHz, 0,8 V/us, SO-14
SGM8632XS/TR – 2-fach Rail-to-Rail-OP, 2,0- 5,5 V, 6 MHz, 3,7 V/us, SO-8
SGM8634XS14/TR – 4-fach Rail-to-Rail-OP, 2,0- 5,5 V, 6 MHz, 3,7 V/us, SO-14
SGMOP07EXS8G/TR – 1-fach Rail-to-Rail-Präzisions-OP, 3,6 – 36 V, 0,6 MHz, 0,3 V/us
SGP 07N120 – IGBT-Transistor, N-CH, 1200V, 16,5A, 125W, TO-220
SI2307CDS-T1-GE3 – MOSFET P-Kanal,-30 V, 2,7 A,Rds(on)0,088 Ohm, SOT-23
SI2308BDS-T1-GE3 – MOSFET N-Kanal, 60 V, 1,9 A, Rds(on) 0,13 Ohm, SOT-23
SI4100DY-GE3 – MOSFET N-Ch 100V 6,8A 0,063R SO8
SI4114DY-GE3 – MOSFET N-Kanal, 20 V, 20 A, Rds(on) 0,0049 Ohm, SO8
SI4134DY-GE3 – MOSFET N-Kanal, 30 V, 14 A, Rds(on) 0,0115 Ohm, SO8
SI4156DY-GE3 – MOSFET N-Kanal, 30 V, 24 A, Rds(on) 0,0048 Ohm, SO8
SI4162DY-GE3 – MOSFET N-Kanal, 30 V, 19,3 A, RDS(on) 0,0079 Ohm, SO8
SI4174DY-GE3 – MOSFET N-Kanal, 30 V, 17 A, Rds(on) 0,0078 Ohm, SO8
SI4401DDY-GE3 – MOSFET P-Kanal, -40 V, -16,1 A, RDS(on) 0,015 Ohm, SO8
SI4425DDY-GE3 – MOSFET N-Kanal, 400 V, 0,17 A, Rds(on) 14,3 Ohm, SOT-223
SI4431CDY-GE3 – MOSFET P-Kanal, -30 V, -9 A, Rds(on) 0,032 Ohm, SO8
SI4434DY-GE3 – MOSFET N-Kanal, 250 V, 3 A, Rds(on) 0,129 Ohm, SO8
SI4435DDY-GE3 – MOSFET P-Kanal, -30 V, -11,4 A, Rds(on) 0,0195 Ohm, SO8
SI4447ADY-GE3 – MOSFET P-Ch 40V 7,2A 0,045R SO8
SI4477DY-GE3 – MOSFET P-Kanal, -20 V, -26,6 A, Rds(on) 0,0062 Ohm, SO-8
SI4559ADY-GE3 – Dual-MOSFET N+P-Kanal, 60/-60 V, 5,3/-3,9 A, RDS(on) 0,058/0,12
SI4840BDY-GE3 – MOSFET N-Kanal, 40 V, 19 A, RDS(on) 0,009 Ohm, SO8
SI4850EY-GE3 – MOSFET N-Ch 60V 8,5A 0,022R SO8
SI4925DDY-GE3 – Dual-MOSFET P-Kanal, -30 V, -8 A, Rds(on) 0,029 Ohm, SO8
SI4936CDY-GE3 – Dual-MOSFET, N-Kanal, 30 V, 5,8 A, 0,04 R, SO-8
SI7149ADP-GE3 – MOSFET P-Kanal, -30 V, -50 A, Rds(on) 0,0052 Ohm, PowerPak SO-8
SI7489DP-GE3 – MOSFET P-Kanal, -100 V, -28 A, Rds(on) 0,033 Ohm, PowerPAK SO-8
SI9933CDY-GE3 – Dual-MOSFET P-Kanal, -20 V, -4 A, Rds(on) 0,048 Ohm, SO-8
SI9945BDY-GE3 – Dual-MOSFET N-Kanal, 60 V, 5,3 A, Rds(on) 0,046 Ohm, SO8
SIHP22N60E-GE3 – MOSFET, N-Kanal, 650 V, 21 A, RDS(on) 0,18 Ohm, TO-220
SIHP22N60EF-GE3 – MOSFET, N-Kanal, 650 V, 19 A, RDS(on) 0,158 R, TO-220AB
SIR 204 EVL – Infrarot-Diode, GaAlAs, 875 nm, 30°, 3 mm, T1
SIR426DP-GE3 – MOSFET N-Ch 40 V 30 A 0,0105 R PowerPakSO8
SJA 1000 T – PeliCAN-Bus-Controller, 1 Mbits/s, 24 MHz, 5 V, SO-28
SK 1/16 SEMIK – Gleichrichterdiode, 1600 V, 1,45 A, Axial
SK 110 DIO – Schottkydiode, 100 V, 1 A, DO-214AC
SK 14 DIO – Schottkydiode, 40 V, 1 A, DO-214AC